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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating
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immediate downloadReleased: 2020-04-01
20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating

20/30406234 DC

BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test method for bipolar degradation by body diode operating

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Standard number:20/30406234 DC
Pages:11
Released:2020-04-01
Status:Draft for Comment
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20/30406234 DC


This standard 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.99 Other semiconductor devices
  • 31.080.30 Transistors