BS ISO 23170. Surface chemical analysis. Depth profiling. Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering
|Standard number:||21/30423416 DC|
|Status:||Draft for Comment|
This standard 21/30423416 DC BS ISO 23170. Surface chemical analysis. Depth profiling. Non-destructive depth profiling of nanoscale heavy metal oxide thin films on Si substrates with medium energy ion scattering is classified in these ICS categories:
- 71.040.40 Chemical analysis
This International Standard specifies a method for the quantitative depth profiling of amorphous heavy metal oxide ultrathin films on Si substrates using Medium Energy Ion Scattering (MEIS). Ultrathin films of thickness less than 10 nm can be analysed with MEIS. 100~500 keV H+ or He+ ions are used for MEIS analysis. Scattered ion energy and angle are measured precisely so that measured MEIS spectra be compared with simulated MEIS spectra. MEIS spectra can be simulated with various programs from free codes such as PowerMeis and SIMNRA in public websites, MEIS expert laboratories, and MEIS manufacturers. Simulation programs calculate scattering cross-sections and electronic stopping powers. Quite often calculated electronic stopping powers are subject to significant errors so that tabulated electronic stopping power values in the IAEA website are recommended to use. If not tabulated, it is recommended to measure electronic stopping power by users for more reliable results. Various types of energy analyzers can be used such as toroidal electrostatic analyser (TEA), magnetic energy analyser (Magnetic), and TOF energy analyser. With MEIS analysis procedures specified in this standard, less than 10 % uncertainty can be expected for ultrathin films under the guidelines describe in this standard. This standard is written for amorphous or polycrystalline thin films but not for crystalline thin films. To improve the uncertainly of MEIS analysis more, additional standards for calibration of scattering geometry, ion energy, energy resolution, detector efficiency, sample alignment, and etc. are required.