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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>21/30434332 DC BS EN 63373. Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
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immediate downloadReleased: 2021-04-08
21/30434332 DC BS EN 63373. Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

21/30434332 DC

BS EN 63373. Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

CURRENCY
29.76 USD
Standard number:21/30434332 DC
Pages:17
Released:2021-04-08
Status:Draft for Comment
DESCRIPTION

21/30434332 DC


This standard 21/30434332 DC BS EN 63373. Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.99 Other semiconductor devices