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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>BS EN 60749-28:2017 Semiconductor devices. Mechanical and climatic test methods Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). Device level
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BS EN 60749-28:2017 Semiconductor devices. Mechanical and climatic test methods Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). Device level

BS EN 60749-28:2017

Semiconductor devices. Mechanical and climatic test methods Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). Device level

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Standard number:BS EN 60749-28:2017
Pages:50
Released:2017-07-10
ISBN:978 0 580 53678 6
Status:Standard
DESCRIPTION

BS EN 60749-28:2017


This standard BS EN 60749-28:2017 Semiconductor devices. Mechanical and climatic test methods is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
IEC 60749-28:2017(E) establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I.
The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.