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>ISO Standards>ISO 12406:2010-Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
immediate downloadReleased: 2010
ISO 12406:2010-Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon

ISO 12406:2010

ISO 12406:2010-Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon

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Standard´s number:ISO 12406:2010
Pages:13
Edition:1
Released:2010
Language:English
DESCRIPTION

ISO 12406:2010


ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
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