PRICES include / exclude VAT
Homepage>BS Standards>71 CHEMICAL TECHNOLOGY>71.040 Analytical chemistry>71.040.40 Chemical analysis>21/30433862 DC BS ISO 17109 AMD1. Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
immediate downloadReleased: 2021-04-28
21/30433862 DC BS ISO 17109 AMD1. Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

21/30433862 DC

BS ISO 17109 AMD1. Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

CURRENCY
LANGUAGE
English
Standard number:21/30433862 DC
Pages:22
Released:2021-04-28
Status:Draft for Comment
DESCRIPTION

21/30433862 DC


This standard 21/30433862 DC BS ISO 17109 AMD1. Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films is classified in these ICS categories:
  • 71.040.40 Chemical analysis

This International Standard specifies a method for the calibration of the sputtered depth of a material from a measurement of its sputtering rate under set sputtering conditions using a single- or multi-layer reference sample with layers of the same material as that requiring depth calibration. The method has a typical accuracy in the range of 5 % to 10 % for layers 20 nm to 200 nm thick when sputter depth profiled using AES, XPS, and SIMS. The sputtering rate is determined from the layer thickness and the sputtering time between relevant interfaces in the reference sample and this is used with the sputtering time to give the thickness of the sample to be measured. The determined ion sputtering rate can be used for the prediction of ion sputtering rates for a wide range of other materials so that depth scales and sputtering times in those materials can be estimated through tabulated values of sputtering yields and atomic densities.


This product includes: