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>BSI Standards >29 ELECTRICAL ENGINEERING>29.100 Components for electrical equipment>29.100.10 Magnetic components>BS EN IEC 60749-22-1:2026 Semiconductor devices — Mechanical and climatic test methods Bond strength — wire bond pull test methods
immediate downloadReleased: 2026-01-21

BS EN IEC 60749-22-1:2026

Semiconductor devices — Mechanical and climatic test methods Bond strength — wire bond pull test methods

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Standard number:BS EN IEC 60749-22-1:2026
Pages:68
Released:2026-01-21
ISBN:978 0 539 34038 9
Status:Standard
BS EN IEC 60749-22-1:2026 Semiconductor Devices Standard

BS EN IEC 60749-22-1:2026 Semiconductor Devices Standard

Introducing the BS EN IEC 60749-22-1:2026, a comprehensive standard that sets the benchmark for mechanical and climatic test methods specifically designed for semiconductor devices. This standard is an essential resource for professionals in the semiconductor industry, providing detailed guidelines on bond strength and wire bond pull test methods.

Overview

The semiconductor industry is at the heart of modern technology, driving innovation and efficiency across various sectors. Ensuring the reliability and durability of semiconductor devices is crucial, and this is where the BS EN IEC 60749-22-1:2026 standard comes into play. Released on January 21, 2026, this standard is the latest in a series of guidelines that focus on the mechanical and climatic testing of semiconductor devices.

Key Features

  • Standard Number: BS EN IEC 60749-22-1:2026
  • Pages: 68
  • Release Date: January 21, 2026
  • ISBN: 978 0 539 34038 9
  • Status: Standard

Detailed Content

This 68-page document is meticulously crafted to provide in-depth information on the mechanical and climatic test methods applicable to semiconductor devices. It covers a wide range of topics, including:

  • Bond Strength Testing: Detailed procedures for assessing the bond strength of wire bonds, ensuring that they meet the required standards for durability and performance.
  • Wire Bond Pull Test Methods: Comprehensive guidelines on conducting wire bond pull tests, which are critical for evaluating the mechanical integrity of semiconductor devices.
  • Climatic Test Methods: Instructions on how to simulate various climatic conditions to test the resilience of semiconductor devices under different environmental stresses.

Why Choose BS EN IEC 60749-22-1:2026?

Adopting the BS EN IEC 60749-22-1:2026 standard ensures that your semiconductor devices are tested to the highest industry standards. This not only enhances the reliability and performance of your products but also boosts customer confidence and satisfaction. By adhering to these guidelines, you can minimize the risk of device failure and extend the lifespan of your semiconductor components.

Who Should Use This Standard?

This standard is indispensable for:

  • Semiconductor Manufacturers: Ensure your products meet international quality and reliability standards.
  • Quality Assurance Professionals: Implement rigorous testing protocols to maintain product integrity.
  • Research and Development Teams: Develop innovative solutions with confidence, knowing they comply with industry standards.
  • Testing Laboratories: Provide accurate and reliable testing services to your clients.

Conclusion

The BS EN IEC 60749-22-1:2026 standard is a vital tool for anyone involved in the design, manufacture, and testing of semiconductor devices. By following the guidelines set out in this document, you can ensure that your products are robust, reliable, and ready to meet the demands of today's technology-driven world. Invest in this standard to stay ahead in the competitive semiconductor industry and deliver products that exceed expectations.

DESCRIPTION

BS EN IEC 60749-22-1:2026


This standard BS EN IEC 60749-22-1:2026 Semiconductor devices — Mechanical and climatic test methods is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 29.100.10 Magnetic components
IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024"). This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance. This test method allows for two distinct methods of pulling wires: a) One method incorporates the use of a hook that is placed under the wire and is then pulled. b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire. This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2. This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2). This International Standard is to be used in conjunction with IEC 60749-22-2:2025.