IEC 60747-8:2010
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ
| Standard number: | IEC 60747-8:2010 |
| Released: | 2010-12-15 |
| Edition: | 3 |
| ICS: | 31.080.30 |
| Pages (English/French - Bilingual): | 155 |
| ISBN (English/French - Bilingual): | 9782889122790 |
IEC 60747-8:2010
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
Semiconductor devices - Part 6: Discrete devices - Thyristors
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors