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immediate downloadReleased: 2019-01-30
IEC 63068-2:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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| Standard number: | IEC 63068-2:2019 |
| Released: | 2019-01-30 |
| Edition: | 1 |
| ICS: | 31.080.99 |
| Pages (English): | 25 |
| ISBN (English): | 9782832264805 |
DESCRIPTION
IEC 63068-2:2019
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.