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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability
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20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability

20/30406230 DC

BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 1. Test method for bias temperature instability

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Standard number:20/30406230 DC
Pages:11
Released:2020-04-01
Status:Draft for Comment
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20/30406230 DC


This standard 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
  • 31.080 Semiconductor devices
  • 31.080.01 Semiconductor devices in general
  • 31.080.30 Transistors