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Homepage>ASTM Standards>19>19.100>ASTM E3084-17R22E01 - Standard Practice for Characterizing Particle Irradiations of Materials in Terms of Non-Ionizing Energy Loss (NIEL)
Released: 01.07.2022

ASTM E3084-17R22E01 - Standard Practice for Characterizing Particle Irradiations of Materials in Terms of Non-Ionizing Energy Loss (NIEL)

Standard Practice for Characterizing Particle Irradiations of Materials in Terms of Non-Ionizing Energy Loss (NIEL)

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Standard number:E3084-17R22E01
Released:01.07.2022
Status:Active
Pages:5
Section:12.02
DESCRIPTION

1.1 This practice describes a procedure for characterizing particle irradiations of materials in terms of non-ionizing energy loss (NIEL). NIEL is used in published literature to characterize both charged and neutral particle irradiations.

1.2 Although the methods described in this practice apply to any particles and target materials for which displacement cross sections are known (see Practice E521), this practice is intended for use in irradiations in which observed damage effects may be correlated with atomic displacements. This is true of some, but not all, radiation effects in electronic and photonic materials.

1.3 Procedures analogous to this one are used for calculation of displacements per atom (dpa) in charged particle irradiations (see Practice E521) or neutron irradiations (see Practice E693).

1.4 Guidance on calculation of dpa from NIEL is provided.

1.5 Procedures related to this one are used for calculation of 1-MeV equivalent neutron fluence in electronic materials (see Practice E722), but in that practice the concept of damage efficiency, based on correlation of observed damage effects, is included.

1.6 Guidance on conversion of NIEL in silicon to monoenergetic neutron fluence in silicon (see Practice E722), and vice versa, is provided.

1.7 The application of this standard requires knowledge of the particle fluence and energy distribution of particles whose interaction leads to displacement damage.

1.8 The correlation of radiation effects data is beyond the scope of this standard. A comprehensive review (1)2 of displacement damage effects in silicon and their correlation with NIEL provides appropriate guidance that is applicable to semiconductor materials and electronic devices.

1.9 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.