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Homepage>BS Standards>81 GLASS AND CERAMICS INDUSTRIES>81.060 Ceramics>81.060.10 Raw materials>BS EN 15979:2011 Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
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immediate downloadReleased: 2011-02-28
BS EN 15979:2011 Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation

BS EN 15979:2011

Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation

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Standard number:BS EN 15979:2011
Pages:26
Released:2011-02-28
ISBN:978 0 580 64179 4
Status:Standard
DESCRIPTION

BS EN 15979:2011


This standard BS EN 15979:2011 Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation is classified in these ICS categories:
  • 81.060.10 Raw materials
This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder and grain-shaped silicon carbide of ceramic raw and basic materials. This application can also be extended to other metallic elements and other similar non-metallic powder and grain-shaped materials such as carbides, nitrides, graphite, carbon blacks, cokes, carbon, as well as a number of further oxidic raw and basic materials after appropriate testing. NOTE There are positive interferences for materials such as e.g. graphite, B4C, BN, WC and several refractory metal oxides. This testing procedure is applicable to mass fractions of the impurities mentioned above from approximately 1 mg/kg up to approximately 3 000 mg/kg, after verification. In some cases it may be possible to extend the range up to 5 000 mg/kg depending on element, wavelength, arc parameter, and sample weight.