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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>BS EN 62047-26:2016 Semiconductor devices. Micro-electromechanical devices Description and measurement methods for micro trench and needle structures
immediate downloadReleased: 2016-05-31
BS EN 62047-26:2016 Semiconductor devices. Micro-electromechanical devices Description and measurement methods for micro trench and needle structures

BS EN 62047-26:2016

Semiconductor devices. Micro-electromechanical devices Description and measurement methods for micro trench and needle structures

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Standard number:BS EN 62047-26:2016
Pages:34
Released:2016-05-31
ISBN:978 0 580 85309 8
Status:Standard
DESCRIPTION

BS EN 62047-26:2016


This standard BS EN 62047-26:2016 Semiconductor devices. Micro-electromechanical devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices
IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.