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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects
immediate downloadReleased: 2019-05-10
BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects

BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects

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Standard number:BS IEC 63068-1:2019
Pages:26
Released:2019-05-10
ISBN:978 0 580 96413 8
Status:Standard
DESCRIPTION

BS IEC 63068-1:2019


This standard BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

 


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