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immediate downloadReleased: 2014-09-30
BS ISO 17560:2014
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
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| Standard number: | BS ISO 17560:2014 |
| Pages: | 22 |
| Released: | 2014-09-30 |
| ISBN: | 978 0 580 85636 5 |
| Status: | Standard |
DESCRIPTION
BS ISO 17560:2014
This standard BS ISO 17560:2014 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon is classified in these ICS categories:
- 71.040.40 Chemical analysis
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.