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Homepage>BS Standards>71 CHEMICAL TECHNOLOGY>71.040 Analytical chemistry>71.040.40 Chemical analysis>BS ISO 23812:2009 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
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immediate downloadReleased: 2009-05-31
BS ISO 23812:2009 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

BS ISO 23812:2009

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

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Standard number:BS ISO 23812:2009
Pages:30
Released:2009-05-31
ISBN:978 0 580 55765 1
Status:Standard
DESCRIPTION

BS ISO 23812:2009


This standard BS ISO 23812:2009 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials is classified in these ICS categories:
  • 71.040.40 Chemical analysis

1.1

This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.