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Homepage>CSN Standards>36 ELECTRICAL ENGINEERING>3646 Photovoltaic elements>CSN EN IEC 63202-1 - Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
Released: 01.03.2020
CSN EN IEC 63202-1 - Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells

CSN EN IEC 63202-1

Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells

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Number of Standard:CSN EN IEC 63202-1
Category:364662
Pages:20
Released:01.03.2020
Catalog number:509003
DESCRIPTION

CSN EN IEC 63202-1

CSN EN IEC 63202-1 (36 4662) This part of IEC 63202 describes procedures for measuring the light-induced degradation (LID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The magnitude of LID in a crystalline silicon PV cell is determined by comparing maximum output power at Standard Test Conditions (STC) before, and after, exposure to simulated sunlight at a specified temperature and irradiance. The purpose of this document is to provide standardized PV cell LID information to help PV module manufacturers in minimizing the mismatch between cells within the same module, thereby maximizing power yield.
Original English text of CSN EN Standard.
The price of the Standard included all amendments and correcturs.