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>CSN Standards>35 ELECTRICAL ENGINEERING>3530 Electrical apparatus, general>CSN EN IEC 63616 - Measurement of the conductivity for metal thin films at microwave and millimeter-wave frequencies - Balanced-type circular disk resonator method
Released: 01.06.2026
CSN EN IEC 63616 - Measurement of the conductivity for metal thin films at microwave and millimeter-wave frequencies - Balanced-type circular disk resonator method

CSN EN IEC 63616

Measurement of the conductivity for metal thin films at microwave and millimeter-wave frequencies - Balanced-type circular disk resonator method

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Number of Standard:CSN EN IEC 63616
Category:353013
Pages:20
Released:01.06.2026
Catalog number:523546
DESCRIPTION

CSN EN IEC 63616

CSN EN IEC 63616 This document relates to a conductivity measurement method of thin metal films at microwave and millimeter-wave frequencies. This method has been developed to evaluate the conductivity of a metal foil used for adhering to a substrate or the interfacial conductivity of a metal layer formed on a dielectric substrate. It uses higher-order modes of a balanced-type circular disk resonator and provides broadband conductivity measurements by using a single resonator. In comparison with the conventional method described in IEC 61788 7 [1] , this method has the following characteristics: - the value of the conductivity of a metal foil can be measured accurately and non destructively; - the value of the interfacial conductivity of a metal layer on a dielectric substrate can be measured accurately and non-destructively; - this method presents broadband measurements by using higher-order modes by one resonator; - this method is applicable for the measurements under the following conditions: - frequency: 10 GHz 170 GHz; - conductivity: 105 S/m 108 S/m.
Original English text of CSN EN Standard.
The price of the Standard included all amendments and correcturs.