PRICES include / exclude VAT
download between 0-24 hoursReleased: 2019-01-30
IEC 63068-1:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Format
Availability
Price and currency
English PDF
Immediate download
183.33 USD
English Hardcopy
in stock
183.33 USD
| Standard number: | IEC 63068-1:2019 |
| Released: | 2019-01-30 |
| Language: | English |
DESCRIPTION
IEC 63068-1:2019
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.