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Homepage>IEC Standards>IEC 63068-3:2020 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
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download between 0-24 hoursReleased: 2020-07-13
IEC 63068-3:2020 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

IEC 63068-3:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Dispositifs à semiconducteurs - Critères de reconnaissance non destructifs des défauts au sein d’une plaquette homoépitaxiale de carbure de silicium pour des dispositifs d’alimentation - Partie 3 : Méthode d’essai pour les défauts à l’aide de la photoluminescence

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Standard number:IEC 63068-3:2020
Released:2020-07-13
Language:English/French - Bilingual
DESCRIPTION

IEC 63068-3:2020

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.