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Homepage>IEC Standards>IEC 63229:2021 - Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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download between 0-24 hoursReleased: 2021-04-07
IEC 63229:2021 - Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 63229:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

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Standard number:IEC 63229:2021
Released:2021-04-07
Language:English
DESCRIPTION

IEC 63229:2021

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.