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download between 0-24 hoursReleased: 2022-04-21
IEC 63275-1:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
Dispositifs à semiconducteurs - Méthode d’essai de fiabilité pour les transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure de silicium - Partie 1: Méthode d’essai pour la mesure de la dérive de la tension de seuil après polarisation électrique en température
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| Standard number: | IEC 63275-1:2022 |
| Released: | 2022-04-21 |
| Language: | English/French - Bilingual |
DESCRIPTION
IEC 63275-1:2022
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).