Log inSign up
LANGUAGE en
Menu
STOREABOUT US FAQContactsDelivery chargesNews
SEARCH
0
Total price
0 USD
PRICES include / exclude VAT
Homepage>UNE standards>UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)
Sponsored link
in stockReleased: 1996-11-01
UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

UNE EN 150012:1991

BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

Especificación marco de detalle: Transistor de efecto de campo (FET) de puerta simple. (Ratificada por AENOR en noviembre de 1996.)

CURRENCY
LANGUAGE
English
Standard number:UNE EN 150012:1991
Pages:65
Released:1996-11-01
DESCRIPTION
This standard UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.) is classified in these ICS categories:
  • 31.080.30
Categories:
UNE standards
31.080.30 Transistors
This product includes:
Print