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Homepage>UNE standards>UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)
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in stockReleased: 1996-11-01
UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

UNE EN 150012:1991

BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)

Especificación marco de detalle: Transistor de efecto de campo (FET) de puerta simple. (Ratificada por AENOR en noviembre de 1996.)

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Standard number:UNE EN 150012:1991
Pages:65
Released:1996-11-01
DESCRIPTION
This standard UNE EN 150012:1991 BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.) is classified in these ICS categories:
  • 31.080.30
Categories:
UNE standards
31.080.30 Transistors
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