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Homepage>CSN Standards>35 ELECTRICAL ENGINEERING>3587 Semiconductor elements>CSN EN 62047-16 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
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CSN EN 62047-16 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

CSN EN 62047-16

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

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English Hardcopy
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45.88 USD
Category:358775
Released:2015
Number of Standard:CSN EN 62047-16
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EN 62047-16


EN 62047-16 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods - IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Original English text of CSN EN Standard.
The price of the Standard included all amendments and correcturs.
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