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Homepage>CSN Standards>35 ELECTRICAL ENGINEERING>3587 Semiconductor elements>CSN EN 62047-26 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
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CSN EN 62047-26 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

CSN EN 62047-26

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

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English Hardcopy
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80.00 USD
Category:358775
Released:2016
Number of Standard:CSN EN 62047-26
DESCRIPTION

EN 62047-26


EN 62047-26 Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures - IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Original English text of CSN EN Standard.
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