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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>BS IEC 63068-4:2022 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
immediate downloadReleased: 2022-09-07
BS IEC 63068-4:2022 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

BS IEC 63068-4:2022

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

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Standard number:BS IEC 63068-4:2022
Pages:28
Released:2022-09-07
ISBN:978 0 539 18417 4
Status:Standard
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BS IEC 63068-4:2022


This standard BS IEC 63068-4:2022 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices